EurekAlert!

Bridging the "yellow-green gap" - GaN-based LED achieves high-rate Wavelength division multiplexing visible light communication system with three-dimensional quantum well structure

A new publication from Opto-Electronic Science; DOI 10.29026/oes.2023.230005 overviews how GaN-based LED achieves high rate Wavelength division multiplexing visible light communication system with ...
Semiconductor Engineering

Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure

“A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED ...
AZOM

Gallium Nitride (GaN) Characterization with Raman and Photoluminescence Techniques

Gallium nitride (GaN) is a binary III/V semiconductor seen as a potential successor to silicon. GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices. 1 ...
EDN

A Short Analysis of Gallium Nitride (GaN) Benefits

With the same electrical characteristics, such as breakdown voltage, on-resistance and maximum current, vertical conduction power devices based on gallium nitride require a smaller die surface than ...