TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...

Sunnyvale, Calif. – The Electronic Device Group of Mitsubishi Electric & Electronics USA Inc. has introduced MOSFET-based RF transmitters for VHF, UHF and 800-MHz applications. The eight modules and ...

CYPRESS, Calif.--(BUSINESS WIRE)--The Semiconductor Division of Mitsubishi Electric US, Inc. today announced the availability of a new version of its RD07MUS2B 7W RF transistor that exceeds the ...

Reliable versatile analog transistor targets More Than Moore applications bringing differential advantage for smart sensors, ...

LEUVEN (Belgium), June 12, 2025— Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, has set a new benchmark in RF transistor performance for mobile ...

CEA-Leti and STMicroelectronics presented results at IEDM 2025 showcasing the key enablers for a new high-performance and versatile RF Si platform co-integrating best-in-class active and passive ...

Infineon is sampling under NDA its first devices in a family of GaN on SiC RF power transistors. The devices allow manufacturers of mobile base stations to build smaller, more powerful and more ...

Anton is the former Editor-in-Chief of Pocketnow.com. As publication leader, he brought Pocketnow as close as possible to the audience throughout the years, while leading a team of enthusiastic ...

Packaging innovation has always been critical to the cooling of components, especially for power-switching devices such as MOSFETs and IGBTs. The non-stop demand to make these devices smaller and ...

While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost.