An Al-gate p-channel MOS transistor is made on an n -type Si substrate with Nd=5 ×10^17  cm^-3. The SiO2 thickness is 100  A in the gate region, ϕm s=-0.15  V, and the effective interface charge Qi is 5 ×10^10 q C / cm^2. Find Wm, VF B, and VT. Sketch the C-V curve for this device and give important numbers for the scale. | Numerade
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